Related papers: Experimental demonstration of continuous electroni…
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the…
Sliding and twisting van der Waals layers with respect to each other gives rise to moir\'e structures with emergent electronic properties. Electrons in these moir\'e structures feel weak potentials that are typically in the tens of…
Using first-principles full-potential density functional calculations, we predict that mechanically tunable band-gap is realizable in ZnS monolayer in graphene-like honeycomb structure by application of in-plane homogeneous biaxial strain.…
We present an ultrasensitive technique for probing transient optical changes in atomically thin molybdenum disulfide (MoS$_2$) layers integrated onto silicon nitride (Si$_3$N$_4$) ring resonators. The MoS$_2$ is illuminated by a femtosecond…
Strain engineering is a powerful strategy for tuning the optoelectronic properties in two-dimensional materials, yet the underlying mechanisms governing their strain response are often not fully elucidated. In this work, our first-principle…
Two-dimensional (2D) heterostructures reveal novel physicochemical phenomena at different length scales, that are highly desirable for technological applications. We present a comprehensive density functional theory study of van der Waals…
The structural, electronic, and dielectric (optical) properties of graphene-like 2D MgO monolayer have been explored through first-principles calculations under bi-axial tensile and compressive mechanical strain within a range of -10% to…
For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e.…
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient…
Intrinsic, in-plane anisotropy of electrical resistivity was studied on mechanically detwinned single crystals of SrFe$_2$As$_2$ above and below the temperature of the coupled structural/magnetic transition, $T_{\textrm{TO}}$. Resistivity…
We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy…
Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding…
Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent…
The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using…
Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most…
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and…
The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport…