Related papers: Enhanced and continuous electrostatic carrier dopi…
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Superconductivity at oxide interfaces has intrigued researchers for decades, yet the underlying pairing mechanism remains elusive. Here we demonstrate that proximity to a ferroelectric quantum critical point dramatically enhances…
In this work, we patterned a two-dimensional electron gas (2DEG) on the surface of a SrTiO$_3$ thin film grown homoepitaxially on SrTiO$_3$ by hybrid molecular beam epitaxy (hMBE). We explored the superconducting dome in this material…
Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate…
Interfaces in oxide heterostructures always provide a fertile ground for emergent properties. Charge transfer from a high energy band to a low energy opponent is naturally expected, as occurring in semiconductor $p$-$n$ junctions. In this…
The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing…
The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of…
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined…
The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This…
Single-layer FeSe films grown on (001) SrTiO3 substrates have shown a significant increase in superconducting transition temperature compared to bulk FeSe. Several mechanisms have been proposed to explain such enhancement, including…
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in…
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…
The dielectric function method for superconductivity has been applied to SrTiO$_{3}$ accounting for the non-parabolic dispersion of charge carriers in the conduction band and for the dispersion of optical phonons based on density functional…
We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…
LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological…
Two dimensional electron gases based on SrTiO$_3$ are an intriguing platform for exploring mesoscopic superconductivity combined with spin-orbit coupling, offering electrostatic tunability from insulator to metal to superconductor within a…
We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence…
In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal…
Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals…