Related papers: Signatures of a Pressure-Induced Topological Quant…
A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor BiTeI with giant Rashba spin splitting. In this work, the evolution of the electrical transport properties in BiTeI and BiTeBr is…
We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase…
BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and…
We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic…
We report a series of high-pressure electrical transport, magnetic susceptibility, and x-ray diffraction measurements on single crystals of the weak topological insulator Bi2TeI and the topological metal Bi3TeI. Room temperature x-ray…
The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase…
Superconductivity and topological quantum states are two frontier fields of research in modern condensed matter physics. The realization of superconductivity in topological materials is highly desired, however, superconductivity in such…
Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to its potential applications in spintronics and quantum computations. In this work, we systematically investigate the structural and electronic…
We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized…
The evolution of the electronic structure of BiTeI, a layered semiconductor with a van der Waals gap, under compression is studied by employing semilocal and dispersion-corrected density-functional calculations. Comparative analysis of the…
Based on the first-principles band structure calculations, we investigate the effects of hydrostatic pressure on the conventional insulator (CI) Sb_2Se_3 and predict that it undergoes a topological quantum phase transition from a CI to a…
A topological phase transition from a trivial insulator to a $\mathbb{Z}_2$ topological insulator requires the bulk band gap to vanish. In the case of noncentrosymmetric materials, these phases are separated by a gapless Weyl semimetal…
Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a…
We report the pressure (p_max = 1.5 GPa) evolution of the crystal structure of the Weyl semimetal T_d-MoTe_2 by means of neutron diffraction experiments. We find that the fundamental non-centrosymmetric structure T_d is fully suppressed and…
ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of…
Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by…
The electronic property and magnetic susceptibility of Ce$_3$Pd$_3$Bi$_4$ were systemically investigated from 18 K to 290 K for varying values of cell-volume using dynamic mean-field theory coupled with density functional theory. By…
We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and…
At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher…
As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely…