Related papers: Voltage-controlled spin injection with an endohedr…
Momentum-resolved spin-polarized bands are a key ingredient in many proposed spintronic devices, but their existence often relies on lattice commensurability or strong spin-orbit coupling. By a large-scale DFT calculation (up to 4212…
We report on spin transport along double-helical molecular systems by considering various contact configurations and asymmetries between the two helical strands in the regime of completely coherent charge transport. Our results reveal that…
We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled…
A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly…
We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…
The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully…
The superconducting version of a diode effect has been the subject of extensive research in the past few years. So far, the focus has almost exclusively been on charge transport, but a natural question is whether it is possible to obtain…
An exact solution is derived for the wave function of an electron in a semiconductor quantum wire with spin-orbit interaction and driven by external time dependent harmonic confining potential. The formalism allows analytical expressions…
We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Organic spintronics has drawn the interest of the science community due to various applications in spin-valve devices. But to date, an efficient room-temperature Organic Spin Valve device has not been experimentally realized due to the…
We present a study of the effects of inelastic scattering on the transport properties of various nanoscale devices, namely H$_2$ molecules sandwiched between Pt contacts, and a spin-valve made by an organic molecule attached to model…
We discuss transport through an interferometer formed by helical edge states of the quantum spin Hall insulator. Focusing on effects induced by a strong magnetic impurity placed in one of the arms of interferometer, we consider the…
Quantum interference effects in rings provide suitable means for controlling spin at mesoscopic scales. Here we apply such a control mechanism to the spin-dependent transport in a ballistic quasi one dimensional ring patterned in two…
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes…
Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which…