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We propose a model to explain the reduced bimolecular recombination rate found in state-of-the-art bulk heterojunction solar cells. When compared to the Langevin recombination, the experimentally observed rate is one to four orders of…

Materials Science · Physics 2009-08-09 C. Deibel , A. Wagenpfahl , V. Dyakonov

A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs)…

Mesoscale and Nanoscale Physics · Physics 2017-04-06 A. V. Sachenko , V. P. Kostylyov , A. V. Bobyl , V. M. Vlasyuk , I. O. Sokolovskyi , E. I. Terukov , M. Evstigneev

In this perspective, we explore the insights into the device physics of perovskite solar cells gained from modeling and simulation of these devices. We discuss a range of factors that influence the modeling of perovskite solar cells,…

Applied Physics · Physics 2020-08-04 Nir Tessler , Yana Vaynzof

The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…

The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows…

Materials Science · Physics 2016-03-28 Benoit Gaury , Paul Haney

Theoretically and experimentally we have proved the existence of optimal thickness of the porous layer used as an anti-reflection coating in solar cells. We have taken into account the joint mechanisms of generation and recombination of…

Mesoscale and Nanoscale Physics · Physics 2017-02-17 Zeinulla Zhanabaev , Kadyrzhan Dikhanbayev

Extensive irradiation of silicon crystal sensors by high energy particles in e. g. accelerators yield defect clusters of different types. Trapping of electrons and holes result in extended internal electric fields that drive remaining free…

Mesoscale and Nanoscale Physics · Physics 2022-12-22 Darius Abramavicius , Juozas Vidmantis Vaitkus

Recently, much effort has been devoted to improve the efficiency of organic photovoltaic solar cells based on blends of donors and acceptors molecules in bulk heterojunction architecture. One of the major losses in organic photovoltaic…

Materials Science · Physics 2013-03-05 Ye Zhang , Tek P. Basel , Bhoj R. Gautam , Xiaomei Yang , Debra J. Mascaro , Feng Liu , Z. Valy Vardeny

We studied the recombination dynamics of charge carriers in organic bulk heterojunction solar cells made of the blend system poly(2,5-bis(3-dodecyl thiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT-C12):[6,6]-phenyl-C61-butyric acid methyl…

Unintentional doping of the active layer is a source for lowered device performance in organic solar cells. The effect of doping is to induce a space-charge region within the active layer, generally resulting in increased recombination…

Strain-balanced Quantum Well Solar Cells (SB- QWSCs) are radiatively dominated at concentrator current levels. Incorporating back surface mirrors on the back of the doped substrate leads to a reduction in this radiative recombination…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 J. P. Connolly , M. F. Führer , D. C. Johnson , I. M. Ballard , K. W. J. Barnham , M. Mazzer , T. N. D Tibbits , J. S. Roberts , G. Hill , C. Calder

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…

Since the photoconversion efficiency $\eta$ of the silicon-based solar cells (SCs) under laboratory conditions is approaching the theoretical fundamental limit, further improvement of their performance requires theoretical modeling and/or…

Materials Science · Physics 2024-09-04 V. P. Kostylyov , A. V. Sachenko , M. Evstigneev , I. O. Sokolovskyi , A. I. Shkrebtii

The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex)…

Demonstration of high-efficiency large area cells with excellent stability is an important requirement towards commercialization of perovskite solar cells (PSC). With reports of high-quality perovskite grains, it is evident that the…

Applied Physics · Physics 2019-05-22 Vikas Nandal , Pradeep R. Nair

In a recent paper, Street et al. [Phys. Rev. B 81, 205307 (2010)] propose first order recombination due to interface states to be the dominant loss mechanism in organic bulk heterojunction solar cells, based on steady-state current--voltage…

Materials Science · Physics 2010-11-15 C. Deibel , A. Wagenpfahl

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3).…

Materials Science · Physics 2012-01-11 V. Lang , J. D. Murphy , R. J. Falster , J. J. L. Morton

Thin film polycrystalline photovoltaics are a mature, commercially-relevant technology. However, basic questions persist about the role of grain boundaries in the performance of these materials, and the extent to which these defects may…

Materials Science · Physics 2019-02-12 Benoit Gaury , Paul M. Haney

Process induced efficiency variation is a major concern for all thin film solar cells, including the emerging perovskite based solar cells. In this manuscript, we address the effect of pinholes or process induced surface coverage aspects on…

Applied Physics · Physics 2017-11-22 Sumanshu Agarwal , Pradeep R. Nair

Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the…