Related papers: A ballistic pn junction in suspended graphene with…
We study a suspended graphene sheet subject to the electric field of a gate underneath. We compute the elastic deformation of the sheet and the corresponding effective gauge field, which modifies the electronic transport. In a clean system…
We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper,…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The…
We demonstrate high-resolution modification of suspended multi-layer graphene sheets by controlled exposure to the focused electron beam of a transmission electron microscope. We show that this technique can be used to realize, on…
We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is…
Graphene holds great potential for superconductivity due to its pure two-dimensional nature, the ability to tune its carrier density through electrostatic gating, and its unique, relativistic-like electronic properties. At present, we are…
More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in…
We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
We present a theoretical analysis of the current-voltage characteristics of a ballistic superconductor-normal-superconductor (SNS) junction, in which a strip of graphene is coupled to two superconducting electrodes. We focus in the…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying…
Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to…