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Related papers: Stochastic Memristive Devices for Computing and Ne…

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Conventional neuro-computing architectures and artificial neural networks have often been developed with no or loose connections to neuroscience. As a consequence, they have largely ignored key features of biological neural processing…

Emerging Technologies · Computer Science 2017-11-08 Giacomo Indiveri , Bernabe Linares-Barranco , Robert Legenstein , George Deligeorgis , Themistoklis Prodromakis

The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…

Emerging Technologies · Computer Science 2023-01-11 Anouk S. Goossens , Majid Ahmadi , Divyanshu Gupta , Ishitro Bhaduri , Bart J. Kooi , Tamalika Banerjee

A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…

Mesoscale and Nanoscale Physics · Physics 2024-02-08 Francisco J. Alonso , David Maldonado , Ana M. Aguilera , Juan B. Roldán

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…

The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…

Mesoscale and Nanoscale Physics · Physics 2016-11-18 Nathan R. McDonald , Robinson E. Pino , Peter J. Rozwood , Bryant T. Wysocki

Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…

Applied Physics · Physics 2024-11-08 Shengbo Wang , Jingfang Pei , Cong Li , Xuemeng Li , Li Tao , Arokia Nathan , Guohua Hu , Shuo Gao

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

Emerging Technologies · Computer Science 2016-12-20 Xinyu Wu , Vishal Saxena

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

The development of memristive device technologies has reached a level of maturity to enable the design of complex and large-scale hybrid memristive-CMOS neural processing systems. These systems offer promising solutions for implementing…

Emerging Technologies · Computer Science 2020-04-22 Elisabetta Chicca , Giacomo Indiveri

With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses have been made in improving performance of individual…

Applied Physics · Physics 2019-12-23 Chen-Yu Wang , Cong Wang , Fanhao Meng , Pengfei Wang , Shuang Wang , Shi-Jun Liang , Feng Miao

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

Materials Science · Physics 2014-12-08 Xiang Yang

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

Applied Physics · Physics 2025-02-06 N Vasileiadis , P Loukas , A Mavropoulis , P Normand , I Karafyllidis , G Ch Sirakoulis , P Dimitrakis

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…

Biological Physics · Physics 2015-05-20 Selina La Barbera , Dominique Vuillaume , Fabien Alibart

The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…

Emerging Technologies · Computer Science 2019-07-01 Hyungjin Kim , Hussein Nili , Mahmood Mahmoodi , Dmitri Strukov

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary…