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Related papers: Line Defects in Molybdenum Disulfide Layers

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Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…

Materials Science · Physics 2026-04-01 Soumyadip Hazra , Sraboni Dey , Arijit Kayal , Narendra Shah , Renjith Nadarajan , Joy Mitra

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

Materials Science · Physics 2016-11-15 Chih-Shan Tan , Yu-Jung Lu , Chun-Chi Chen , Pei-Hsuan Liu , Shangjr Gwo , Guang-Yu Guo , Lih-Juann Chen

Defects in two-dimensional (2D) semiconductors play a decisive role in determining their electronic, optical, catalytic and quantum properties. Understanding how defect energy levels respond to variations in layer thickness is essential for…

Materials Science · Physics 2026-04-08 Nikhilesh Maity , Shibu Meher , Manoj Dey , Abhishek Kumar Singh

We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX$_2$, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is placed ontop of the close-packed surfaces of the metal…

Mesoscale and Nanoscale Physics · Physics 2013-11-12 Zhaoqiang Bai , Troels Markussen , Kristian S. Thygesen

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to…

To calculate the conductivity of a material having full knowledge of its composition is a reasonably simple task. To do the same in reverse, i.e., to find information about the composition of a device from its conductivity response alone,…

Disordered Systems and Neural Networks · Physics 2021-07-06 F. R. Duarte , S. Mukim , A. Molina-Sánchez , Tatiana G. Rappoport , M. S. Ferreira

Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the…

Materials Science · Physics 2022-02-22 Aravindh Kumar , Alvin Tang , H. -S. Philip Wong , Krishna Saraswat

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques…

We report a comprehensive first-principles study of the thermodynamics and transport of intrinsic point defects in layered oxide cathode materials LiMO$_2$ (M=Co, Ni), using density-functional theory and the Heyd-Scuseria-Ernzerhof screened…

Materials Science · Physics 2014-12-17 Khang Hoang , Michelle D. Johannes

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length…

Mesoscale and Nanoscale Physics · Physics 2014-01-29 Han Liu , Mengwei Si , Yexin Deng , Adam T. Neal , Yuchen Du , Sina Najmaei , Pulickel M. Ajayan , Jun Lou , Peide D. Ye

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

Mesoscale and Nanoscale Physics · Physics 2015-01-30 Wan Sik Hwang , Maja Remskar , Rusen Yan , Tom Kosel , Jong Kyung Park , Byung Jin Cho , Wilfried Haensch , Huili , Xing , Alan Seabaugh , Debdeep Jena

The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of…

Materials Science · Physics 2023-01-26 Lei Zhang , Kun Liu , Fanyi Kong , Xue Han , Jianxun Dai , Mengmeng Wang , Changsen Sun , Huolin Huang , Lujun Pan , Dawei Li

The properties of Mo_6S_3I_6 nanowires were investigated with ab initio calculations based on the density-functional theory. The molecules build weakly coupled one-dimensional chains with three sulfur atoms in the bridging planes between…

Materials Science · Physics 2009-11-11 I. Vilfan , D. Mihailovic

Understanding the microscopic mechanism of chemical vapor deposition (CVD) growth of two-dimensional molybdenum disulfide (2D MoS2) is a fundamental issue towards the function-oriented controlled growth. In this work, we report results on…

Materials Science · Physics 2017-04-21 Dancheng Zhu , Haibo Shu , Feng Jiang , Danhui Lv , Vijay Asokan , Omar Omar , Jun Yuan , Ze Zhang , Chuanhong Jin

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin…

Materials Science · Physics 2014-10-14 R. Roldán , J. A. Silva-Guillén , M. P. López-Sancho , F. Guinea , E. Cappelluti , P. Ordejón

Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states induced by charged adatoms on MoS$_2$ using large-scale…

Mesoscale and Nanoscale Physics · Physics 2018-05-08 Martik Aghajanian , Arash A. Mostofi , Johannes Lischner

The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene.…

Ultrathin two-dimensional semiconductors obtained from layered transition-metal dichalcogenides such as molybdenum disulfide (MoS2) are promising for ultimately scaled transistors beyond Si. Although the shortening of the semiconductor…

Materials Science · Physics 2016-08-15 Ryo Nouchi

We have established a rigorous theoretical formalism for Floquet engineering, or investigating and eventually tailoring most crucial electronic properties of tetragonal molybdenum disulfide (1T$^\prime$-MoS$_2$), by applying an external…

Materials Science · Physics 2022-06-22 Andrii Iurov , Liubov Zhemchuzhna , Godfrey Gumbs , Danhong Huang , Kathy Blaise , Chinedu Ejiogu

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect…