Related papers: Pressure induced topological quantum phase transit…
Recently monolayer jacutingaite (Pt2HgSe3), a naturally occurring exfoliable mineral, discovered in Brazil in 2008, has been theoretically predicted as a candidate quantum spin Hall system with a 0.5 eV band gap, while the bulk form is one…
Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topological insulator as well as topological crystalline…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized…
Bi$_2$Se$_3$, a layered three dimensional (3D) material, exhibits topological insulating properties due to presence of surface states and a band gap of 0.3 eV in the bulk. We study the effect hydrostatic pressure $P$ and doping with rare…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
Among various topological insulators, Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap.…
Low-buckled silicene is a prototypical quantum spin Hall insulator with the topological quantum phase transition controlled by an out-of-plane electric field. We show that this field-induced electronic transition can be further tuned by an…
We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such…
Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and…
Pressure-induced superconductivity and its relation to corresponding Hall coefficient (RH) have been reported for Bi2Te3, one of known topological insulators. A full phase diagram is presented which shows a complex dependence of the…
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as…
Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110]…
Tuning superconductivity in topological materials by means of chemical substitution, electrostatic gating, or pressure is thought to be an effective route towards realizing topological superconductivity with their inherent Majorana…
Inelastic neutron scattering and bulk magnetic susceptibility studies of the quantum S=1/2 spin ladder system IPA-CuCl3 are performed under hydrostatic pressure. The pressure dependence of the spin gap $\Delta$ is determined. At $P=1.5$ GPa…
We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its…
Bi$_{2}$Se$_{3}$ is a well known 3D-topological insulators(TI) with a non-trivial Berry phase of $ \left(2n+1\right)\pi $ attributed to the topology of the band structure. The Berry phase shows non-topological deviations from $…
In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…
The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in…
Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…