Related papers: Single Hole Transport in a Silicon Metal-Oxide-Sem…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the…
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles the structure of conventional transistors. Since classical…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…
Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are…
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we…
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…
Multi-donor architecture in silicon offers a promising direction towards scalable solid-state qubits and quantum technologies operating at practical conditions. However, the overlap of multiple donor wave-functions develops a complex…
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits.…
The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's…
We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates…
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary…
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…