Related papers: Two-dimensional bipolar junction transistors
We investigate the Berezinskii-Kosterlitz-Thouless (BKT) scaling of the critical current of Josephson junction dynamics across a barrier potential in a two-dimensional (2D) Bose gas, motivated by recent experiments by Luick \textit{et al.}…
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…
Recent progress in two-dimensional superconductors with atomic-scale thicknesses is reviewed mainly from the experimental point of view. The superconducting systems treated here involve a variety of materials and forms: elemental-metal…
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…
We introduce a zero-bias superconducting voltage amplifier that harvests energy from a thermal gradient by exploiting negative differential resistance (NDR) in an asymmetric tunnel junction. The device is based on an asymmetric…
Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact…
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
Introducing superconductivity in topological materials can lead to innovative electronic phases and device functionalities. Here, we present a new strategy for quantum engineering of superconducting junctions in moire materials through…
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage…
Two-dimensional t-J model is studied by a variational Monte Carlo method, using Gutzwiller-Jastrow-type wave functions. Various kinds of superconducting pairing symmetries are compared in order to determine the phase diagram of the ground…
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI…
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V…
Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…
Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed…
Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open…
Pursuing higher-temperature superconductors under ambient pressure continues to be a prominent topic in materials discovery. Isomorphic structures like MgB2 exhibit potential for conventional BCS-type superconductivity, but their transition…
The high susceptibility of ultrathin two-dimensional (2D) material resonators to force and temperature makes them ideal systems for sensing applications and exploring thermomechanical coupling. Although the dynamics of these systems at high…
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These…