Related papers: Investigation of quantum-dimensional structure par…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
Many nano and quantum devices, with their sizes often spanning from millimeters down to sub-nanometer, have intricate low-dimensional, non-uniform, or hierarchical structures on surfaces and interfaces. Since their functionalities are…
Atomic-resolution imaging with scanning transmission electron microscopy is a powerful tool for characterizing the nanoscale structure of materials, in particular features such as defects, local strains, and symmetry-breaking distortions.…
We discuss a scheme for reconstructing experimentally the diagonal elements of the density matrix of quantum optical states. Applications to PDC heralded photons, multi-thermal and attenuated coherent states are illustrated and discussed in…
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at…
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si…
To study the ballistic transport of charge carriers in nano-structured quantum devices, a highly efficient numerical technique is developed, which provides continuous transmission spectra for arbitrarily complex potential geometries in two…
The electronic structure of nanoscale moieties (such as molecules and quantum dots) governs the properties and performance of the bottom-up fabricated devices based on their assemblies. Accordingly, simple and faster experimental methods…
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si…
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…
A computational model study for complete frequency redistribution linear incoherent two-level atomic radiation trapping in optically dense media using the multiple scattering representation is presented. This model study discuss at length…
X-ray single particle imaging involves the measurement of a large number of noisy diffraction patterns of isolated objects in random orientations. The missing information about these patterns is then computationally recovered in order to…
Complex oxide interfaces have been one of the central focuses in condensed matter physics and material science. Over the past decade, aberration corrected scanning transmission electron microscopy and spectroscopy has proven to be…
An interpolating two-dimensional X-ray imaging detector based on a single photon counter with gas amplification by GEM (gas electron multiplier) structures is presented. The detector system can be used for time-resolved structure research…
We have developed the technique of a quantum wave impedance determination for the sequence of not only constant potentials but also for potentials of forms for which the solution of a Shr\"{o}dinger equation exists at least in terms of…
The spatial localization of quantum states plays a central role in condensed-matter phenomena, ranging from many-body localization to topological matter. Building on the dissipation-fluctuation theorem, we propose that the localization…
The evolution of the quantum wave packet describing an atom trapped in the surface-tip junction of the scanning tunneling microscope is investigated by using the time-dependent Schroedinger equation, and by a quasi-classical Hamiltonian…
We show theoretically that a quantum-dot circuit quantum electrodynamics (CQED) device can be used as a probe of the Overhauser field in quantum dots. By coupling a transmission line to the interdot tunneling gate, an…
Current imaging scanning tunneling microscopy is used to observe the electronic wavefunctions in InAs/ZnSe core/shell nanocrystals. Images taken at a bias corresponding to the s conduction band state show that it is localized in the central…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…