Related papers: Theory of carrier density in multigated doped grap…
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the…
We study the electronic structure of gated graphene sheets. We consider both infinite graphene and finite width ribbons. The effect of Coulomb interactions between the electrically injected carriers and the coupling to the external gate are…
In this research work, roll-to-roll chemical vapor deposited graphene device electronic transport properties are benchmarked to elucidate and comprehend mobility degradation in the real-world commercial application of graphene devices.…
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…
The quantum corrections to the conductivity and the thermopower in monolayer graphene are studied. We use the recursive Green's function method to calculate numerically the conductivity and the thermopower of graphene. We then analyze these…
The gravitational potential is a key function involved in many astrophysical problems. Its evaluation inside continuous media from Newton's law is known to be challenging because of the diverging kernel 1/|r-r'|. This difficulty is…
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in…
The graphene membrane irradiated by weak activating alternative electric field in terahertz range was considered. The quantum approach based on the time-dependent density matrix method was used. The exact solution was obtained for graphene…
Randomly-doped silicon has many competitive advantages for quantum computation; not only is it fast to fabricate but it could naturally contain high numbers of qubits and logic gates as a function of doping densities. We determine the…
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…
We investigate charge and energy transport in monolayer graphene with smooth finite-range disorder, modeled by soft impurity potentials. Using a continuum Dirac model, we go beyond the Born approximation by computing the exact scattering…
We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding…
Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent…
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals,…
Relativistic quantum theory of induced scattering of 2D Dirac particles by electrostatic field of impurity ion (in the Born approximation) in the doped graphene at the presence of an external electromagnetic radiation field (actually…
We derive a quantum kinetic model describing the dynamics of graphene electrons in phase space based on the Wigner--Weyl formalism. To take into account the quantum nature of the carriers, we make use of the quantum Liouville equation for…
We use numerically exact Chebyshev expansion and kernel polynomial methods to study transport through circular graphene quantum dots in the framework of a tight-binding honeycomb lattice model. Our focus lies on the regime where individual…
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…
We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…
Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect…