Related papers: Reverse epitaxy of Ge: ordered and facetted surfac…
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries…
This work is concerned with the propagation of electromagnetic waves in isotropic chiral media and with the effects produced by a plane boundary between two such media. In analogy with the phenomena of reflection and refraction of plane…
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of…
Quasi-periodic structures of quasicrystals yield novel effects in diverse systems. However, there is little investigation on employing quasi-periodic structures in the morphology control. Here, we show the use of quasi-periodic surface…
The peak effect (PE) has been observed in a twinned crystal of YBa$_2$Cu$_3$O$_{7-\delta}$ for H$\parallel$c in the low field range, close to the zero field superconducting transition temperature (T$_c$(0)) . A sharp depinning transition…
This paper concerns the inverse spectral problem for analytic simple surfaces of revolution. By `simple' is meant that there is precisely one critical distance from the axis of revolution. Such surfaces have completely integrable geodesic…
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the…
Two-dimensional higher-order topological insulators can display a number of exotic phenomena such as half-integer charges localized at corners or disclination defects. In this paper, we analyze these phenomena, focusing on the paradigmatic…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
We present the application of the inverse scattering method to the design of semiconductor heterostructures having a preset dependence of the (conduction) electrons' reflectance on the energy. The electron dynamics are described by either…
An uncommon double-ray scenario of light resonant scattering by a periodic metasurface is proposed to provide strong non-specular reflection. The metasurface is constracted as an array of silicon nanodisks placed on thin silica-on-metal…
It is well known that the quasinormal modes (or resonant states) of photonic structures can be associated with the poles of the scattering matrix of the system in the complex-frequency plane. In this work, the inverse problem, i.e., the…
It is known that ion-irradiation can lead surfaces to spontaneously develop patterns with characteristic length scales on the order of only a few nanometers. Pattern formation typically occurs only for irradiation angles beyond a critical…
A nanopatterning scheme is presented by which the structure height can be controlled in the tens of nanometers range and the lateral resolution is a factor at least three times better than the point spread function of the writing beam. The…
B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration…
Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is…
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at…
Epsilon-near-zero and epsilon near-pole materials enable reflective systems supporting a class of symmetry-protected and accidental embedded eigenstates (EE) characterized by a diverging phase-resonance. Here we show that pairs of…
On the proper timescale, amorphous solids can flow. Solid flow can be observed macroscopically in glaciers or lead pipes, but it can also be artificially enhanced by creating defects. Ion Beam Sputtering (IBS) is a technique in which ions…
Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…