Related papers: Electro-thermal characterization of Si-Ge HBTs wit…
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct…
The method consists in the monitoring of the temperature variation of a superconductor tape subjected to a trapezoidal current pulse. Simulations of the experiment were performed using the lumped capacitance model and also the finite…
We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the…
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…
To encode quantum information in semiconductor spin qubits, voltage pulses are necessary for initialization, gate operation, and readout. However, these pulses dissipate heat, shifting spin-qubit frequencies and reducing gate fidelities.…
We report an experimental setup for simultaneously measuring specific heat and thermal conductivity in feedback-controlled pulsed magnetic fields of 50 msec duration at cryogenic temperatures. A stabilized magnetic field pulse obtained by…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in…
The junction temperature is a very important parameter for monitoring power electronics converters based on MOSFET transistors. They offer the possibility of switching at relatively higher frequencies than other transistors like IGTBTs.…
Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by…
This work establishes a closed-form analysis for two-dimensional transient heat transfer in an absorber plate based on the thermal wave model when the collector starts to work. The method of separation of variables is employed to determine…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…