Related papers: Metal-insulator transition in three-dimensional se…
A relation between the energy of an elementary `insulating' excitation corresponding to the metal-insulator transition and the bandgap width in a semiconductor is obtained. An effect of atomic relaxation on the temperature and pressure…
The Boson-Fermion model, describing a mixture of tightly bound electron pairs and quasi-free electrons hybridized with each other via a charge exchange term, is studied in the limit of infinite dimensions, using the Non-Crossing…
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…
Random flux is commonly believed to be incapable of driving full metal-insulator transitions in non-interacting systems. Here we show that random flux can after all induce a full metal-band insulator transition in the two-dimensional…
We consider a system of superconducting grains embedded in a normal metal. At zero temperature this system exhibits a quantum superconductor-normal metal phase transition. This transition can take place at arbitrarily large conductance of…
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions…
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on…
Metal-insulator transitions in two dimensional materials represent a great opportunity for fast, low energy and ultra-dense switching devices. Due to the small energy difference between its semimetallic and semiconducting crystal phases,…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…
The quasi-one-dimensional linear chain compound HfTe3 is experimentally and theoretically explored in the few- to single-chain limit. Confining the material within the hollow core of carbon nanotubes allows isolation of the chains and…
A review is given on the theory of metal-insulator transitions (MIT) in doped semiconductors. We focus in particular on reviewing theories of their anomalous magnetic properties, which emerge from the interplay of spin and charge…
Metal-insulator transition in anisotropic disordered Anderson model with both topological and diagonal disorder is investigated numerically. For four sets of the model parameters we found the critical disorder and the critical exponent and…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
To understand how charge transport is affected by a background medium and vice versa we study a two-channel transport model which captures this interplay via a novel, effective fermion-boson coupling. By means of (dynamical) DMRG we prove…
We exhibit an interaction-driven metal-insulator quantum phase transition in a holographic model. Use of a helical lattice enables us to break translation invariance while preserving homogeneity. The metallic phase is characterized by a…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…