Related papers: Metal-insulator transition in three-dimensional se…
In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…
We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis…
We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…
The doping-induced metal-insulator transition in two-chain systems of correlated fermions is studied using a solvable limit of the t-J model and the fact that various strong- and weak-coupling limits of the two-chain model are in the same…
Metal-insulator transitions are studied within a three-component Falicov-Kimball model which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model the…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…
The critical behaviour of 3-dimensional disordered systems in a strong magnetic field is investigated by analysing the spectral fluctuations of the energy spectrum. The level spacing distribution $P(s)$ as well the Dyson-Mehta statistics…
Using a cold atomic gas exposed to laser pulses -- a realization of the chaotic quasiperiodic kicked rotor with three incommensurate frequencies -- we study experimentally and theoretically the Anderson metal-insulator transition in three…
We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…