Related papers: Metal-insulator transition in three-dimensional se…
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by…
We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…
We study the metal-insulator transition (MIT) in weakly coupled disordered planes on the basis of a Non-Linear Sigma Model (NL$\sigma $M). Using two different methods, a renormalization group (RG) approach and an auxiliary field method, we…
Non-standard .sty file `equations.sty' now included inline. The critical exponents of the metal--insulator transition in disordered systems have been the subject of much published work containing often contradictory results. Values ranging…
An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
We consider a two dimensional semiconductor with a local attraction among the carriers. We study the ground state of this system as a function of the semiconductor gap. We find a direct transition from a superconducting to an insulating…
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of…
A two-dimensional gas of non-interacting quasiparticles in a nearly periodic potential is considered at zero temperature. The potential is a superposition of a periodic potential, induced by the charge density wave of a Wigner crystal, and…
We discuss a recent mapping of the Anderson-Mott metal-insulator transition onto a random field magnet problem. The most important new idea introduced is to describe the metal-insulator transition in terms of an order parameter expansion…
Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…
Superconductivity in cuprates peaks in the doping regime between a metal at high p and an insulator at low p. Understanding how the material evolves from metal to insulator is a fundamental and open question. Early studies in high magnetic…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical…