Related papers: An efficient cntfet-based 7-input minority gate
In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and…
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of…
The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal oxide semiconductor (CMOS) transistors. However, the previously proposed spin…
Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies…
Optimizing the size and depth of CNOT circuits is an active area of research in quantum computing and is particularly relevant for circuits synthesized from the Clifford + T universal gate set. Although many techniques exist for finding…
Control modular addition is a core arithmetic function, and we must consider the computational cost for actual quantum computers to realize efficient implementation. To achieve a low computational cost in a control modular adder, we focus…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The past few decades have seen exponential growth in capabilities of digital electronics primarily due to the ability to scale Integrated Circuits (ICs) to smaller dimensions while attaining power and performance benefits. That scalability…
Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT(CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single electron tunneling technology and coherent…
Multi-controlled single-target (MC) gates are some of the most crucial building blocks for varied quantum algorithms. How to implement them optimally is thus a pivotal question. To answer this question in an architecture-independent manner,…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
Numerical optimization is used to design linear-optical devices that implement a desired quantum gate with perfect fidelity, while maximizing the success rate. For the 2-qubit CS (or CNOT) gate, we provide numerical evidence that the…
Developing quantum computers for real-world applications requires understanding theoretical sources of quantum advantage and applying those insights to design more powerful machines. Toward that end, we introduce a high-fidelity gate set…
We report on experiments performed on a cantilever-based tri-port nano-electro-mechanical (NEMS) device. Two ports are used for actuation and detection through the magnetomotive scheme, while the third port is a capacitively coupled gate…
The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in…
Fault-tolerant quantum computers compose elements of a discrete gate set in order to approximate a target unitary. The problem of minimising the number of gates is known as gate-synthesis. The approximation error is a form of coherent…