Related papers: Spin Relaxation in Weak Localization Regime in Mul…
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not…
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can…
Recently, it has been shown that spin nematic (quadrupolar) or higher multipolar correlation functions exhibit a quasi long-range order in the wide region of the field-induced Tomonaga-Luttinger-liquid (TLL) phase in spin-1/2 zigzag chains.…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…
The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from…
Spin Hall magnetoresistance (SMR), the variation in resistance in a heavy metal (HM) with the magnetization orientation of an adjacent ferromagnet (FM), has been extensively studied as a powerful tool for probing surface magnetic moments in…
We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic…
The translational-diffusion coefficient $D_T$ and the spin-rotation contribution to the $^1$H NMR relaxation time $T_{1J}$ for methane (CH$_4$) are investigated using MD (molecular dynamics) simulations, over a wide range of densities…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…
We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of non-quantizing magnetic fields. We discuss the effects of two carrier transport, weak localization, weak anti-localization, and strong…
Spin-spin relaxation time ($T_2$) and magnetic susceptibility ($\chi$) of the second layer $^3$He adsorbed on Grafoil, exfoliated graphite, preplated with a monolayer $^4$He are studied by pulsed-NMR in a density range of $0.68 \leq \rho…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
We report giant magnetoresistance up to 150 percent at low bias current and low temperature as well as room temperature magnetoresistance in polymeric spin-valves having the structure LSMO/conjugated polymer/Co. The conjugated polymers,…
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in…
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the…
Imaging the vibrations of nanomechanical resonators means measuring their flexural mode shapes from the dependence of their frequency response on in-plane position. Applied to two-dimensional resonators, this technique provides a wealth of…
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…
We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the…
We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal…
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus…