Related papers: Emergent Novel Metallic State in a Disordered 2D M…
We study the influence of scale-free correlated disorder on the metal-insulator transition in the Anderson model of localization. We use standard transfer matrix calculations and perform finite-size scaling of the largest inverse Lyapunov…
The phenomenon of Anderson localization wherein non-interacting electrons are localized by quenched impurities is a subject matter that has been extremely well studied. However, localization transition under the combined influence of…
We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we…
It is commonly believed that a non-interacting disordered electronic system can undergo only the Anderson metal-insulator transition. It has been suggested, however, that a broad class of systems can display disorder-driven transitions…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
Wigner crystals are extremely fragile, which is shown to result from very strong geometric frustration germane to long-range Coulomb interactions. Physically, this is manifested by a very small characteristic energy scale for shear density…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder…
We study the level-statistics of a disordered system undergoing the Anderson type metal-insulator transition. The disordered Hamiltonian is a sparse random matrix in the site representation and the statistics is obtained by taking an…
Disorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal insulator transition and the integral and fractional quantum Hall effects. In this paper, we investigate the role of disorder in the…
We study the role of electronic correlation in a disordered two-dimensional model by using a variational wave function that can interpolate between Anderson and Mott insulators. Within this approach, the Anderson-Mott transition can be…
Topological matter is a trending topic in condensed matter: From a fundamental point of view it has introduced new phenomena and tools, and for technological applications, it holds the promise of basic stable quantum computing. Similarly,…
Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…
We study the dimensional dependence of the interplay between correlation and disorder in two dimension at half filling using 2D $t-t'$ disordered Hubbard model with deterministic disorder both at zero and finite temperatures. Inclusion of…
The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied…
Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…
Electrons (or holes) confined in 2D semiconductor layers have served as model systems for studying disorder and interaction effects for almost 50 years. In particular, strong disorder drives the metallic 2D carriers into a strongly…
We have found the first instance of a third-order topological Anderson insulator (TOTAI). This disorder-induced topological phase is gapped and characterized by a quantized octupole moment and topologically protected corner states, as…
Topological states of matter in disordered systems without translation symmetry have attracted great interest in recent years. These states with topological characters are not only robust against certain disorders, but also can be…
We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond…