Related papers: Counting statistics of hole transfer in a p-type G…
We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling…
We theoretically consider charge transport through two quantum dots coupled in series. The corresponding full counting statistics for noninteracting electrons is investigated in the limits of sequential and coherent tunneling by means of a…
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the…
Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs…
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function…
Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
Full counting statistics concerns the stochastic transport of electrons in mesoscopic structures. Recently it has been shown that the charge transport statistics for non-interacting electrons in a two-terminal system is always generalized…
We consider the counting statistics of electron transport through a double quantum dot with special emphasis on the dephasing induced by a nearby charge detector. The double dot is embedded in a dissipative enviroment, and the presence of…
A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…
The charge transfer statistics of a tunnel junction coupled to a quantum object is studied using the charge projection technique. The joint dynamics of the quantum object and the number of charges transferred through the junction is…
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of…
We consider a quantum dot system whose charge fluctuations are monitored by a quantum point contact allowing for the detection of both charge and transferred heat statistics. Our system consists of two nearby conductors that exchange energy…
We examine the full counting statistics of quantum dots, which display super-Poissonian shot noise. By an extension to a generic situation with many excited states we identify the underlying transport process. The statistics is a sum of…
Destructive interference of single-electron tunneling between three quantum dots can trap an electron in a coherent superposition of charge on two of the dots. Coupling to external charges causes decoherence of this superposition, and in…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We develop a method for calculation of charge transfer statistics of persistent current in nanostructures in terms of the cumulant generating function (CGF) of transferred charge. We consider a simply connected one-dimensional system (a…
In order to fully characterize the noise associated with electron transport, with its severe consequences for solid-state quantum information systems, the theory of full counting statistics has been developed. It accounts for correlation…
Recent experimental progress has made it possible to detect in real-time single electrons tunneling through Coulomb blockade nanostructures, thereby allowing for precise measurements of the statistical distribution of the number of…
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…