Related papers: Abrupt barrier contribution to the electron spin s…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
The subbands of weakly coupled double-layer two dimensional electron gas systems consist of narrowly spaced pairs whose corresponding wavefunctions are symmetric and antisymmetric combinations of isolated layer subband wavefunctions. The…
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…
We show that an electric field parallel to the wavefronts of an electron-hole grating in a GaAs quantum well generates, via the electronic spin Hall effect, a spin grating of the same wave vector and with an amplitude that can exceed 1% of…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
Spin-conserving and spin-flip opaque reflections of electrons from a potential barrier in heterostructures are described. An electric field of the barrier is considered to be the only source of energy spin splitting in the presence of…
The effect of an atomically sharp impenetrable interface on the spin splitting of the spectrum of two-dimensional electrons in heterostructures based on (001) III-V compounds has been analyzed. To this end, the single band Hamiltonian…
The quantum spin Hall effect has been predicted theoretically and observed experimentally in InAs/GaSb quantum wells as a result of inverted band structures, for which electron bands in InAs layers are below heavy hole bands in GaSb layers…
We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how…
Tunneling of electrons through the barriers in heterostructures has been studied, within unified transfer matrix approach. The effect of barrier width on the transmission coefficient of the electrons has been investigated for different…
We investigate the electronic structure of a two-dimensional electron gas created at the surface of the multi-valley semimetal 1T-PtSe$_2$. Using angle-resolved photoemission and first-principles-based surface space charge calculations, we…
The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…
We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed.…
We report a new electron interaction effect in GaAs/AlGaAs quantum wires. Using DC-bias spectroscopy, we show that large and abrupt changes occur to the energies of spin-down (lower energy) states as they populate. The effect is not…