Related papers: Large Current Modulation and Spin-Dependent Tunnel…
We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. We consider both semiconducting TMDs and metallic TMDs, and different…
By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and…
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…
Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices…
Due to the weak spin-orbit interaction and the peculiar relativistic dispersion in graphene, there are exciting proposals to build spin qubits in graphene nanoribbons with armchair boundaries. However, the mutual interactions between…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report…
We study forward scattering of 2D massless Dirac electrons at Fermi energy {\varepsilon} > 0 in single layer graphene through a 1D rectangular barrier of height {u_0} in the presence of uniform Rashba spin-orbit coupling (of strength…
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently…
It is highly desirable to modify and improve the Dirac electron system of graphene for novel electronic properties and promising applications. For this purpose, we study 2D heterostructures consisting of graphene and monolayer TMDs by means…
We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels.…
Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in…
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across…
Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a…
We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable…
The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$…
The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical…