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Strain engineering is a powerful strategy for tuning the optoelectronic properties in two-dimensional materials, yet the underlying mechanisms governing their strain response are often not fully elucidated. In this work, our first-principle…

Materials Science · Physics 2025-11-05 Hongfa Wang , Yancheng Gong , Subrahmanyam Pattamatta , Junwen Li , Hailong Wang , Zhizi Guan

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported…

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium…

Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $\mu$m) are grown by…

Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic…

Materials Science · Physics 2018-06-06 N. Barrett , J. Rault , I. Krug , B. Vilquin , G. Niu , B. Gautier , D. Albertini , O. Renault

Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated…

Electronic structure and optical band gap of CoFe2O4 thin films grown on (001) oriented LaAlO3 have been investigated. Surprisingly, these films show additional Raman modes at room temperature as compared to a bulk spinel structure. The…

Materials Science · Physics 2015-06-11 A. V. Ravindra , P. Padhan , W. Prellier

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase…

Materials Science · Physics 2015-06-04 Hao Zhou , Jiawang Hong , Yihui Zhang , Faxin Li , Yongmao Pei , Daining Fang

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

Materials Science · Physics 2016-07-19 San-Dong Guo , Lun Zhang

Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was…

Other Condensed Matter · Physics 2007-05-23 Feizhou He , B. O. Wells , Z. -G. Ban , S. P. Alpay , S. Grenier , S. M. Shapiro , Weidong Si , A. Clark , X. X. Xi

Radio-frequency compressed ultrafast electron diffraction has been used to probe the coherent and incoherent coupling of impulsive electronic excitation at 1.55 eV (800 nm) to optical and acoustic phonon modes directly from the perspective…

Materials Science · Physics 2015-06-23 Robert P. Chatelain , Vance R. Morrison , Bart L. M. Klarenaar , Bradley J. Siwick

Strongly correlated iridate pyrochlores with geometrically frustrated spins have been recognized as a potentially interesting group of oxide materials where novel topological phases may appear. A particularly attractive system is the…

By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from -7% (compression) to +7%…

Materials Science · Physics 2017-01-30 Andrey A Kistanov , Yongqing Cai , Yong-Wei Zhang , Sergey V Dmitriev , Kun Zhou

Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor…

Materials Science · Physics 2022-04-28 Fanjie Wang , Yonggang Xu , Lei Mu , Jiasheng Zhang , Wei Xia , Jiamin Xue , Yanfeng Guo , Ji-Hui Yang , Hugen Yan

We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic…

Strongly Correlated Electrons · Physics 2010-05-17 Woo Seok Choi , Soon Jae Moon , Sung Seok A. Seo , Daesu Lee , Jung Hyuk Lee , Pattukkannu Murugavel , Tae Won Noh , Yun Sang Lee

We report on a strain-induced martensitic transformation, accompanied by a suppression of magnetic order in epitaxial films of chemically disordered FeRh. X-ray diffraction, transmission electron microscopy and electronic structure…

Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…

Applied Physics · Physics 2019-04-01 Rachel Onn Winestook , Cecile Saguy , Chun-Hao Ma , Ying-Hao Chu , Yachin Ivry

Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition…

Materials Science · Physics 2018-01-25 Jike Lyu , Ignasi Fina , Raul Solanas , Josep Fontcuberta , Florencio Sanchez

We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to…

Materials Science · Physics 2017-01-03 L. J. Zhu , J. H. Zhao