English

Electronic structure and optical band gap of CoFe2O4 thin films

Materials Science 2015-06-11 v1
Authors: A. V. Ravindra , P. Padhan , W. Prellier
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Abstract

Electronic structure and optical band gap of CoFe2O4 thin films grown on (001) oriented LaAlO3 have been investigated. Surprisingly, these films show additional Raman modes at room temperature as compared to a bulk spinel structure. The splitting of Raman modes is explained by considering the short-range ordering of Co and Fe cations in octahedral site of spinel structure. In addition, an expansion of band-gap is observed with the reduction of film thickness, which is explained by the quantum size effect and misfit dislocation. Such results provide interesting insights for the growth of spinel phases.

Keywords

electronic structure optical band gap cofe2o4 thin films raman modes spinel structure quantum size effect misfit dislocation cation ordering

Cite

@article{arxiv.1210.1067,
  title  = {Electronic structure and optical band gap of CoFe2O4 thin films},
  author = {A. V. Ravindra and P. Padhan and W. Prellier},
  journal= {arXiv preprint arXiv:1210.1067},
  year   = {2015}
}

Comments

15 pages, 5 figures, and 1 table; Accepted and to be published/appeared in APL soon

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