Related papers: Tunneling spectroscopy of phosphorus impurity atom…
Within the model of elastic impurity scattering, we study how changes in the energy dependence of the electronic density of states (EDOS) $N(\epsilon)$ around the Fermi energy $\epsilon_F$ are reflected in the frequency-dependent optical…
Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material…
In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon…
The superconducting order parameter and LDOS spectra near an impenetrable surface are studied on the basis of selfconsistent calculations for a two band superconductor with nodeless extended s-+wave order parameter symmetry, as possibly…
The low energy band structure of the FeAs based superconductors is fitted by a tight binding model with two Fe ions per unit cell and two degenerate orbitals per Fe ion. Based on this, superconductivity with extended s-wave pairing symmetry…
We study the impurity scattering on the $\pm$s-wave superconductor, with realistic parameters for the Fe-pnictide superconductors. Using $\mathcal{T}$-matrix method, generalized for the two bands, we found that impurity scattering of the…
We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our…
Using numerical techniques we study the spectral function $A(k,\omega)$ of a spin-fermion model for cuprates in the regime where magnetic and charge domains (stripes) are developed upon hole-doping. From $A(k,\omega)$ we study the…
We determine the effect of quasiparticle interference on the spatial variations of the local density of states (LDOS) in graphite in the neighborhood of an isolated impurity. A number of characteristic behaviors of interference are…
We observe anomalous charge modulations induced by ionized indium impurities on the surface of the semiconductor black phosphorus by scanning tunneling microscopy (STM). When the impurities are switched into a negatively charged state by…
The electronic structure of Si(111)-(6x6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb$_{(111)}$ and with the diameter of…
We report an experimental refinement of the local charge density at the Si (111) 7x7 surface utilizing a combination of x-ray and high energy electron diffraction. By perturbing about a bond-centered pseudoatom model, we find experimentally…
We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus…
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black…
Within the two-orbital model for BiS$_{2}$-based superconductors, the effect from a single nonmagnetic impurity scattering on the superconducting-state is investigated in terms of the T-matrix approach. By considering three kinds of the…
The spatial distribution of the local density of states (LDOS) at Mn acceptors near the (110) surface of p-doped InAs is investigated by Scanning Tunneling Microscopy (STM). The shapes of the acceptor contrasts for different dopant depths…
Based on the calculation and analysis of local Green functions of impurity atoms of low concentration in a two-dimensional graphene lattice, the conditions for the formation and characteristics of local discrete levels with energies lying…
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole…
We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the…
Using angle-resolved photoemission spectroscopy (ARPES), we have observed the band structure, Fermi surface and their doping dependences in La2-xSrxCuO4. The results reveal that the Fermi surface undergoes a dramatic change: it is hole-like…