Related papers: Quantum resistance standard accuracy close to the …
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…
Despite the extensive literature on the quantum Hall effect (QHE), a direct derivation of the phenomenological formula $\rho_{xy} = h/e^2\nu$ from first principles has remained elusive. In this work, we revisit the Landau and…
It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance…
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an…
We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $\nu=8/3$. We identified this state by a quantized Hall resistance and an activated…
We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and…
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was…
The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…