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Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable.…
We realized and experimentally tested a conceptually new kind of electrically thin absorbers of electromagnetic waves. The idea is to utilize a single layer of precisely designed meta-atoms. This allows one to design an absorber with…
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moir\'e potential. As the angle between the layers changes, so do the electronic properties. As the…
An efficient mixed deterministic/sparse-stochastic plane-wave approach is developed for bandstructure calculations of large supercell periodic generalized-Kohn-Sham density functional theory, for any hybrid-exchange density functional. The…
We have studied p-shell nuclei using a two-frequency shell-model approach with an effective interaction derived from the Bonn-A nucleon-nucleon potential by means of a G-matrix folded-diagram method. Shell-model wave functions of two…
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas…
Electronic structure of NiS_{2-x}Se_x system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core level as well as the valence band spectra of NiS_2 in conjunction with many-body…
We delineate an ab initio approach for obtaining x-ray absorption spectra as provided by many-body perturbation theory, together with its realization within an all-electron framework. Employing the Bethe-Salpeter equation, we address…
Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the…
Quantum control of the wave function of two interacting electrons confined in quasi-one-dimensional double-well semiconductor structures is demonstrated. The control strategies are based on the knowledge of the energy spectrum as a function…
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor…
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core…
A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and…
We propose a device for studying the Fermi-Hubbard model with long-range Coulomb interactions using an array of quantum dots defined in a semiconductor two-dimensional electron gas system. Bands with energies above the lowest energy band…
The last several decades have seen significant advances in the theoretical modeling of materials within the fields of solid-state physics and materials science, but many methods commonly applied to this problem struggle to capture strong…
We investigate core/shell GaAs/(Pb,Sn)Te nanowire nanoheterostructures with wurtzite (wz) GaAs cores and (Pb,Sn)Te topological crystalline insulator shells. The nanostructures have been grown by molecular beam epitaxy using two distinct MBE…
We present a comprehensive study of the electronic structure of the layered semiconductor InSe using density functional theory. We calculate the band structure of the monolayer and bulk material with the band gap corrected using hybrid…
We consider an effective mass model for an electron-hole pair in a simplified confinement potential, which is applicable to both a nanoscopic self-assembled semiconducting InAs ring and a quantum dot. The linear optical susceptibility,…
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of…
Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…