Related papers: Parameter space for thermal spin-transfer torque
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…
We have studied the crossover between thermally assisted and pure quantum tunneling in single crystals of high spin (S=10) uniaxial single molecule magnet Mn12-acetate using micro-Hall effect magnetometry. Magnetic hysteresis experiments…
The temperature dependence of the response of a magnetic system to an applied field can be understood qualitatively by considering variations in the energy surface characterizing the system and estimated quantitatively with rate theory. In…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We present the temperature dependence of the thermal magnon density in a thin ferromagnetic layer. By employing Brillouin light scattering and varying the temperature, an increase of the magnon density accompanied by a lowering of the…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…
We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments…
We present a theoretical description of the thermopower due to magnon-assisted tunneling in a mesoscopic tunnel junction between two ferromagnetic metals. The thermopower is generated in the course of thermal equilibration between two baths…
The quantum tunneling of the magnetization vector are studied theoretically in single-domain ferromagnetic nanoparticles placed in an external magnetic field at an arbitrarily directed angle in the $ZX$ plane. We consider the…