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The comprehensive search for multifunctional materials has resulted in the discovery of semiconductors and oxides showing ferromagnetic features persisting to room temperature. In this tutorial review the methods of synthesis of these…

Materials Science · Physics 2011-01-12 Alberta Bonanni , Tomasz Dietl

CdGeP2 chalcopyrites doped with Mn have been recently found to exhibit room temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d^5)…

Strongly Correlated Electrons · Physics 2009-11-07 Priya Mahadevan , Alex Zunger

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure…

Materials Science · Physics 2009-11-11 H. Akai , M. Ogura

A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism…

Condensed Matter · Physics 2009-11-07 V. A. Ivanov , P. M. Krstajic , F. M. Peeters , V. Fleurov , K. Kikoin

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of…

Materials Science · Physics 2009-11-07 S. Das Sarma , E. H. Hwang , A. Kaminski

The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin…

Materials Science · Physics 2017-09-19 Sushant Gupta , V. Ganesan , N. P. Lalla , Indra Sulania , B. Das

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix,…

Room-temperature ferromagnetism is observed in (110) oriented ZnO films containing 5 at % of Sc, Ti, V, Fe, Co or Ni, but not Cr, Mn or Cu ions. There are large moments, 1.9 and 0.5 muB/atom for Co- and Ti-substituted oxides, respectively.…

Materials Science · Physics 2009-11-10 M. Venkatesan , C. B. Fitzgerald , J. G. Lunney , J. M. D. Coey

This paper reports the effect of Fe doping on the structure and room temperature ferromagnetism of CeO2 nanoparticles. X-ray diffraction and selective area electron diffraction measurement reflects that Ce1-xFexO2 (x = 0.0 - 0.07)…

Materials Science · Physics 2011-01-31 Shalendra Kumar , Geun Woo Kim , B. H. Koo , S. K. Sharma , M. Knobel , Chan Gyu Lee

The possibility to induce ferromagnetism and insulator to metal transitions in small A site cation manganites Ln_{1-x}Ca_xMnO_3 by rhodium doping is shown for the first time. Colossal magnetoresistance (CMR) properties are evidenced for a…

The observation of room temperature ferromagnetism along with a low temperature paramagnetic counterpart in undoped Cu-Cu2O-rGO nanocomposite was demonstrated. A phenomenological approach was taken to explain the observations based on 3D…

The distribution of chemically similar transition-metal ions is a fundamental issue in the study of herbertsmithite-type kagome antiferromagnets. Using synchrotron radiation, we have performed resonant powder x-ray diffractions on newly…

Strongly Correlated Electrons · Physics 2013-05-21 Yuesheng Li , Jianlong Fu , Zhonghua Wu , Qingming Zhang

From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin…

Materials Science · Physics 2007-05-23 Engin Durgun , Deniz Cakir , Nurten Akman , Salim Ciraci

While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga_(1-x)Mn_(x)As, doped semiconductors without magnetic ions have not shown evidence for ferromagnetism. Using a generalized disordered…

Strongly Correlated Electrons · Physics 2009-11-13 Erik Nielsen , R. N. Bhatt

A close link between the charge transfer electronic structures and polarity dependent high-TC ferromagnetism of TM2+:ZnO DMSs (TM2+ = 3d ions) is demonstrated. Trends in ferromagnetism across the 3d series of TM2+:ZnO DMSs predicted from…

Materials Science · Physics 2007-05-23 Kevin R. Kittilstved , William K. Liu , Daniel R. Gamelin

In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of…

Materials Science · Physics 2019-04-29 Arkaprava Das , Ashish Kumar , Vijay Soni , Soumen Kar

We revisit the most widely investigated and controversial oxide diluted magnetic semiconductor (DMS), Co:TiO2, with a new high temperature film growth, and show that the corresponding material is not only an intrinsic DMS ferromagnet, but…

Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron-sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the…

Materials Science · Physics 2009-11-13 Jia-Hsien Yao , Hsiu-Hau Lin , Tsung-Shune Chin

The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W,…

In a recent letter, it has been predicted within first principle studies that Mn-doped ZrO2 compounds could be good candidate for spintronics application because expected to exhibit ferromagnetism far beyond room temperature. Our purpose is…

Materials Science · Physics 2013-02-21 S. K. Srivastava , P. Lejay , B. Barbara , O. Boisron , S. Pailhès , G. Bouzerar
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