Related papers: Strong correlation induced charge localization in …
When holes are doped into an antiferromagnetic insulator they form a slowly fluctuating array of ``topological defects'' (metallic stripes) in which the motion of the holes exhibits a self-organized quasi one-dimensional electronic…
Motivated by recent experiments of carrier-doped C$_{60}$ in a field-effect transistor (FET), effects of spatial single particle potential variations on Mott-Hubbard (MH) insulators are studied theoretically. It is shown that the presence…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…
We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively.…
Band theory and BCS theory are arguably the most successful theories of condensed matter physics. Yet, in a number of materials, in particular the high-temperature superconductors and the layered organic superconductors, they fail. In these…
In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped…
The physics of doped Mott insulators is at the heart of strongly correlated materials and is believed to constitute an essential ingredient for high-temperature superconductivity. In systems with higher SU(N) spin symmetries, even richer…
The free energy bounds for inhomogeneous current states in doped antiferromagnetic insulators and spatial configurations of spin and charge degrees of freedom in lightly and heavily underdoped phases of this strongly correlated electron…
We study the interplay of disorder and correlation in the one-dimensional hole-doped Hubbard-model with disorder (Anderson-Hubbard model) by using the density-matrix renormalization group method. Concentrating on the doped-hole density…
Recent experiments on inelastic light scattering in a number of insulating cuprates [1] revealed a new excitation appearing in the case of crossed polarizations just below the optical absorption threshold. This observation suggests that…
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems'…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
I introduce a doped two-dimensional quantum dimer model describing a doped Mott insulator and retaining the original Fermi statistics of the electrons. This model shows a rich phase diagram including a d-wave hole-pair unconventional…
We analyze enhancements in the magnitude of the self-energy for electrons far away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole…
We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the…
$^{13}$C nuclear magnetic resonance measurements were performed for a single-component molecular material Zn(tmdt)$_{2}$, in which tmdt's form an arrangement similar to the so-called ${\kappa}$-type molecular packing in…
We reveal the crucial effect of strong spin-charge coupling on high-harmonic generation (HHG) in Mott insulators. In a system with antiferromagnetic correlations, the HHG signal is drastically enhanced with decreasing temperature, even…
The energy of one hole in one dimensional Ising antiferromagnet is calculated using exact diagonalization (ED) method on finite systems with number of sites N ranging from 4 to 50. This study gives a power-law description for the hole…
We have analyzed the dynamics of a single hole doped in a canted antiferromagnet using the t-J model. Within the self consistent Born approximation we have found that the hole propagates at two different energy scales along the…
Angle-resolved photoemission spectroscopy (ARPES) has revealed peculiar properties of mobile dopants in correlated anti-ferromagnets (AFMs). But describing them theoretically, even in simplified toy models, remains a challenge. Here we…