Related papers: Nanomagnetic Logic and Magnetization Switching Dyn…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
We apply a recently developed quantum theory of spin transfer torque to study the effect of the quantum noise in spin transfer process on the magnetization switching in spin-torque-driven devices. The quantum noise induces considerable…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate…
We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
The asymptotic behavior of switching time as a function of current for a uniaxial macrospin under the effects of both spin-torque and thermal noise is explored analytically by focusing on its diffusive energy space dynamics. The scaling…
The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner and an output waveguide.…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Spin-orbit torques (SOTs) are widely used to control magnetization in nanoscale electric systems and are typically assumed to drive skyrmion nucleation and motion in a deterministic manner, especially in materials with strong…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different…
We study sequential tunneling of magnetic excitations in nonitinerant systems (either magnons or spinons) through triangular molecular magnets. It is known that the quantum state of such molecular magnets can be controlled by application of…
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…