Related papers: Photoluminescent SiC tetrapods
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown…
Colloidal core/shell nanocrystals are key materials for optoelectronics, enabling control over essential properties via precise engineering of the shape, thickness, and crystal lattice structure of their shell. Here, we apply the growth…
Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in…
We present a route to near-perfect absorption in compact photonic-crystal (PC) structures constructed from strongly absorbing media that are typically highly reflective in bulk form. Our analysis suggests that the key underlying mechanism…
Two-dimensional (2D) materials have attracted considerable attention due to their unique physicochemical properties and significant potential in energy-related applications. Polymeric carbon nitrides (PCNs) with 2D stacked architecture show…
Molecular zero-dimensional (0D) halide perovskite-inspired cesium copper iodide (Cs3Cu2I5) is a highly promising candidate for optoelectronic applications due to their low toxicity, high stability, and intense blue emission. However, their…
Extending two-dimensional photonic integrated circuits (PICs) to three-dimensional (3D) configurations promises great potential for scaling up integration, enhancing functionality, and improving performance of PICs. Silicon-based 3D PICs…
Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented…
Semiconducting nanoparticles are the building blocks of optical nanodevices as their electronic states, and therefore light absorption and emission, can be controlled by modifying their size and shape. CdSe is perhaps the most studied of…
Silicon nanowires grown along the <100>-direction with a bulk Si core are studied with density functional calculations. Two surface reconstructions prevail after exploration of a large fraction of the phase space of nanowire…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled…
Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of…
A Silicon Photomultiplier, SiPM, is a metasystem of Avalanche Photodiodes, APDs, which embedded in a specific purpose electronic, becomes a metadevice with unique and useful advanced functionalities to capture, transmit and analyze…
In recent years, many new materials have been developed and prepared to improve the performance of light-harvesting technologies and to develop new and attractive applications. The problem of stability of long-term operation of various…
We report a combined experimental and computational study of the optical properties of individual silicon telluride (Si2Te3) nanoplates. The p-type semiconductor Si2Te3 has a unique layered crystal structure with hexagonal closed-packed Te…
Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and…
Nano-fabrication in silicon, arguably the most important material for modern technology, has been limited exclusively to its surface. Existing lithographic methods cannot penetrate the wafer surface without altering it, whereas emerging…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
Silicon Carbide (SiC) optical constants are fundamental inputs for radiative transfer models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical…