Related papers: Quantum well-based waveguide for semiconductor las…
We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak off-resonant driving field. In the…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
Refrigeration of a solid-state system with light has potential applications for cooling small-scale electronics and photonics. We show theoretically that two coupled semiconductor quantum wells are efficient cooling media for optical…
A new scheme for infrared generation without population inversion between subbands in quantum-well and quantum-dot lasers is presented and documented by detailed calculations. The scheme is based on the simultaneous generation at three…
Lasers and LEDs display a statistical distribution in the number of photons emitted in a given time interval. New applications exploiting the quantum properties of light require sources for which either individual photons, or pairs, are…
Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection…
It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductors (for example n-type…
Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with…
We analize theoretically the dynamics of N electrons localized in a semiconductor quantum ring under a train of phase-locked infrared laser pulses. The pulse sequence is designed to control the total angular momentum of the electrons. The…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum…
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum…
In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…
A method for a calculation of quantum capacitance for a two-dimesional electron gas (2DEG) in potential wells of complicated geometry on the base of a quantum wave impedance technique was proposed. The application of this method was…
Waveguides potentially offer an effective medium for interconnecting quantum processors within a modular framework, facilitating the coherent quantum state transfer between the qubits across separate chips. In this work, we analyze a…
We present quantum cascade laser (QCL) frequency comb devices with engineered waveguides for managing the dispersion. The QCL waveguide consists of multiple sections with different waveguide widths. The narrow and wide sections of the…
Even distribution of carriers allows to maximize optical gain of the Optically-Pumped Vertical External Cavity Surface Emitting Laser. In this paper we show how to distribute the quantum wells and blocking layers in order to compensate the…
We investigate triple V-shaped type-II quantum wells designed to emit at 6-9 {\mu}m wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6In0.4Sb hole quantum wells. The wells' composition and thicknesses are…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased…