Related papers: Rewriting Codes for Flash Memories
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this issue, this…
A new class of exact-repair regenerating codes is constructed by combining two layers of erasure correction codes together with combinatorial block designs, e.g., Steiner systems, balanced incomplete block designs and t-designs. The…
Two classes of turbo codes over high-order finite fields are introduced. The codes are derived from a particular protograph sub-ensemble of the (dv=2,dc=3) low-density parity-check code ensemble. A first construction is derived as a…
Multiple reads of the same Flash memory cell with distinct word-line voltages provide enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized by maximizing the mutual information (MI) of the quantized…
Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…
Cloud computing facilitates the access of applications and data from any location by a distributed storage system. Erasure codes offer better data replication technique with reduced storage costs for more reliability. This paper considers…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…
Block-based programming languages like Scratch have become increasingly popular as introductory languages for novices. These languages are intended to be used with a "tinkering" approach which allows learners and teachers to quickly…
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for…
Let $\mathcal{B}(\cdot)$ be an error ball function. A set of $q$-ary sequences of length $n$ is referred to as an \emph{$(n,q,N;\mathcal{B})$-reconstruction code} if each sequence $\boldsymbol{x}$ within this set can be uniquely…
This paper presents a novel achievable scheme for coded caching systems with $N$ files and $K$ users, specifically when $N \leq K$. This new scheme employs linear coding both during the placement phase - where cache contents are linear…
Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash…
This paper considers coding for so-called partially stuck (defect) memory cells. Such memory cells can only store partial information as some of their levels cannot be used fully due to, e.g., wearout. First, we present new constructions…
We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…
This paper presents an explicit construction for an $((n=2qt,k=2q(t-1),d=n-(q+1)), (\alpha = q(2q)^{t-1},\beta = \frac{\alpha}{q}))$ regenerating code (RGC) over a field $\mathbb{F}_Q$ having rate $\geq \frac{t-2}{t}$. The RGC code can be…
A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…
Erasure codes play an important role in storage systems to prevent data loss. In this work, we study a class of erasure codes called Multi-Erasure Locally Recoverable Codes (ME-LRCs) for flash memory array. Compared to previous related…
Distributed storage systems provide reliable access to data through redundancy spread over individually unreliable nodes. Application scenarios include data centers, peer-to-peer storage systems, and storage in wireless networks. Storing…