Related papers: High-order sideband generation in bulk GaAs
We have investigated the terahertz (THz) nonlinear response of the multigap superconductor MgB$_2$, using THz two-dimensional coherent spectroscopy (THz 2DCS). With broadband THz drive fields, we identified a nonlinear response at twice the…
Reconstructing effective Hamiltonians of condensed matter systems directly from experimental data is challenging because of the intricate relationship between Hamiltonian parameters and observables. Here, we reconstruct an effective…
The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for…
We detect thermally excited surfaces waves on a submicron SiO 2 layer, including Zenneck and guided modes in addition to Surface Phonon Polaritons. The measurements show the existence of these hybrid thermal-electromagnetic waves from…
We have observed photoinduced negative optical conductivity, or gain, in the terahertz frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular magnetic field at low temperatures. The gain is narrow-band: it…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two…
We show that an alternative theory of superconductivity recently proposed (theory of hole superconductivity) leads to the surprising consequence that real electron-positron pair production will occur for superconductors larger than a…
Grazing incidence fast atom diffraction at crystal surfaces (GIFAD or FAD) has demonstrated coherent diffraction both at effective energies close to one eV ($\lambda_\perp\approx$ 14 pm for He) and at elevated surface temperatures offering…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
The interplay of strong disorder and superconductivity is a topic of long-term interest in condensed matter physics. Here we explore the nonlinear THz response of superconducting NbN films close to the 3D metal-insulator transition. For the…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm…
Resistive transition measurements are reported for Magnesium diboride strands with SiC dopants. The SiC was added as 10 mol of SiC to 90 mol of binary magnesium diboride. Three different SiC powders were used, the average particle sizes…
The goal of this report is to study the conditions for efficient THz generation using Frequency Difference Generation principle. In particular, two CW IR beams are used together with a periodically poled lithium niobate crystal in order to…
This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for…
By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
We study third-harmonic generation (THG) in an excitonic insulator (EI) described in a two-band correlated electron model. Employing the perturbative expansion with respect to the external electric field, we derive the THG susceptibility…
The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule…