Related papers: Valley-spin blockade and spin resonance in carbon …
We theoretically investigate the spin dynamics of a heavy hole confined to an unstrained III-V semiconductor quantum dot and interacting with a narrowed nuclear-spin bath. We show that band hybridization leads to an exponential decay of…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random…
We analytically calculate the nuclear-spin interactions of a single electron confined to a carbon nanotube or graphene quantum dot. While the conduction-band states in graphene are p-type, the accordant states in a carbon nanotube are…
New data analysis with Pauli blocking and entanglement explains CP violation in $B^o\rightarrow K\pi$ decays, absence in $B^{\pm} \rightarrow K\pi$ decays and predicts unexpected contrast between pure I=1/2 in individual $B^{\pm}$ and $B^o$…
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…
The electrical characteristics of a carbon nanotube can be significantly modified by applying elastic strain. This study focuses on exploring this phenomenon in a single-walled carbon nanotube (SWNT) using tight-binding transport…
Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other…
Understanding the interplay between many-body phenomena and non-equilibrium in systems with entangled spin and orbital degrees of freedom is a central objective in nano-electronics. We demonstrate that the combination of Coulomb…
Weakly coupled quantum dots in the Pauli spin blockade regime are considered with respect to spin-dependent transport. By attaching one half-metallic and one non-magnetic lead, the Pauli spin blockade if formed by a pure triplet state with…
Strained graphene with lattice deformations has been demonstrated to give rise to large pseudomagnetic fields and host many exotic properties. Here, we propose a non-magnetic approach to realize a momentum-dependent out-of-plane spin…
We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with…
Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial…
We exploit hyperfine interactions in a single Mn-ion confined in a quantum dot (QD) to create a qudit, i.e. a multi-level quantum-bit system, with well defined, addressable and robust set of spin states for the realization of universal…