Related papers: Trapped charge dynamics in InAs nanowires
We have measured magnetic trap lifetimes of ultra-cold Rb87 atoms at distances of 5-1000 microns from surfaces of conducting metals with varying resistivity. Good agreement is found with a theoretical model for losses arising from…
Evolution of a Langmuir wave is studied numerically for finite amplitudes slightly above the threshold which separates damping from nondamping cases. Arrest of linear damping is found to be a second-order effect due to ballistic evolution…
We report on experiments conducted on single walled carbon nanotube bundles aligned in chains and connected through a natural contact barrier. The dependence upon the temperature of the transport properties is investigated for samples…
The advancement of quantum technology networks necessitates high-speed, low-thermal load, and minimal-noise communication links between cryogenic and room-temperature components. At the heart of modern telecommunication, lay optical…
We analyzed the localized charge dynamics in the system of $N$ interacting single-level quantum dots (QDs) coupled to the continuous spectrum states in the presence of Coulomb interaction between electrons within the dots. Different dots…
We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…
We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…
Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev…
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic…
A failure of chips in a huge amount of modern electronic devices is connected as a rule with the undesirable capturing of charge (electrons and holes) by traps in a thin insulating film of silicon oxide in transistors. It leads to a…
We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport…
Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
We describe an experiment in which cold rubidium atoms, confined in an elongated magnetic trap, are excited by transverse oscillation of the trap centre. The temperature after excitation exhibits resonance as a function of the driving…
Niobium thin film wires were fabricated using electron beam lithography with a four layer liftoff mask system, and subsequently thinned by anodisation. The resistance along the wire was monitored in situ and trimmed by controlling the…
Ionic Coulomb blockade is one of the mesoscopic effects in ion transport revealing the quantized nature of ionic charges, which is of crucial importance to our understanding of the sub-continuum transport in nanofluidics and the mechanism…
We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the…
Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back…
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…