Related papers: Generation of pure bulk valley current in graphene
In this paper, we investigate the two competing effects of strains and magnetic fields in single-layer graphene to explore its impact on various phenomena of quantum field theory, such as induced charge density, magnetic catalysis, symmetry…
In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed…
Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and…
We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…
Previous works on deformed graphene predict the existence of valley-polarized states, however, optimal conditions for their detection remain challenging. We show that in the quantum Hall regime, edge-like states in strained regions can be…
We investigate adiabatic quantum pumping through a normal metal-insulator-superconductor (NIS) junction in a monolayer of graphene. The pumped current is generated by periodic modulation of two gate voltages, applied to the insulating and…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
Bilayer graphene is a nanomaterial that allows for well-defined, separated quantum states to be defined by electrostatic gating and, therefore, provides an attractive platform to construct tunable quantum dots. When a magnetic field…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
In recent years the chain fountain became prominent for its counter-intuitive fascinating physical behavior. Most widely known is the experiment in which a long chain leaves an elevated beaker like a fountain and falls to the ground under…
We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…
Analogous to charge and spin, electrons in solids endows an additional degree of freedom: the valley pseudospin. Two-dimensional hexagonal materials such as graphene exhibit two valleys, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$.…
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of $e^2/h$, has been the first fascinating manifestation of the…
We investigate the influence of gauge fields induced by strain on the supercurrent passing through the graphene-based Josephson junctions. We show in the presence of a constant pseudomagnetic field ${\bf B}_S$ originated from an arc-shape…
We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different…
We propose three-terminal spin devices with graphene nanoribbons (terminals) and a graphene flake (channel) to generate a highly spin-polarized current without an external magnetic field or ferromagnetic electrodes. The Hubbard repulsion…
Valley-dependent topological physics offers a promising avenue for designing nanoscale devices based on gapless single-layer graphene. To demonstrate this potential, we investigate an electrical bias-controlled topological discontinuity in…