Related papers: Room-temperature transverse-electric polarized int…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices.…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the…
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain…
We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…
We observe the inverse spin Hall effect in a two-dimensional electron gas confined in AlGaAs/InGaAs quantum wells. Specifically, we find that an inhomogeneous spin density induced by the optical injection gives rise an electric current…
We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a…
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of…
We proposed and demonstrated a scheme of surface emitting circularly polarized light source by introducing strong imbalance between left- and right-circularly polarized vacuum fields in an on-waveguide chiral grating structure. We observed…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field…
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…
We study the electronic coupling between two vertically stacked InAs quantum dots, which are embedded in the center of a n-i-n structure. We use a micro-photoluminescence setup to optically isolate a single quantum dot pair and measure the…
We report the canonical properties of Bose-Einstein condensation of polaritons, seen previously in many low-temperature experiments, at room temperature in a GaAs/AlGaAs structure. These effects include a nonlinear energy shift of the…
We report a laser that coherently emits phonon-polaritons, quasi-particles arising from the coupling between photons and transverse optical phonons. The gain is provided by an intersubband transition in a quantum cascade structure. The…
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the…
Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment influences heavily…
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {\mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well…