Related papers: Low threshold, room-temperature microdisk lasers i…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Photonic integrated Raman microlasers, particularly discrete multi-color lasers which are crucial for extending the emission wavelength range of chip-scale laser sources to much shorter wavelength, are highly in demand for various…
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency…
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
Stable ultrashort light pulses and frequency combs generated by mode-locked lasers have many important applications including high-resolution spectroscopy, fast chemical detection and identification, studies of ultrafast processes, and…
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Controlled tuning of the whispering gallery modes of GaN/InGaN {\mu}-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the {\mu}-disks in water and irradiating with…
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range…
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…
Fiber taper waveguides are used to improve the efficiency of room temperature photoluminescence measurements of AlGaAs microdisk resonant cavities with embedded self-assembled InAs quantum dots. As a near-field collection optic, the fiber…
We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs.…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
The generation of coherent radiation in nanostructures has attracted considerable interest in recent years owing both to the quantum electrodynamical effects that emerge in small volumes, and to their potential for future applications. The…
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The…
We report on fabrication of whispering-gallery-mode microlasers in a Nd:glass chip by femtosecond laser three-dimensional (3D) micromachining. Main fabrication procedures include the fabrication of freestanding microdisks supported by thin…
We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T…