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Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…
The high cost of single crystal III-V substrates limits the use of GaAs and related sphalerite III-V materials in many applications, especially photovoltaics. Separating epitaxially-grown layers from a growth substrate can reduce costs,…
Emission at 4.6 um was observed from an N2O filled hollow core fiber laser. 8-ns pump pulses at 1.517 um excited a vibrational overtone resulting in lasing on an R and P branch fundamental transition from the upper pump state. At optimum…
We investigated and demonstrated a 1.3 $\mu$m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded In$_x$Ga$_{1-x}$As buffer and epitaxial structure on a GaAs substrate. Bottom…
We propose and analyze an active mirror structure that uses a subwavelength grating reflector combined with optical gain. The structure is designed to be directly bonded to a thermal substrate (such as diamond) for efficient heat removal.…
Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical…
We demonstrate how exactly bound cavity modes can be realized in dielectric structures other than 3d photonic crystals. For a microcavity consisting of crossed anisotropic layers, we derive the cavity resonance frequencies, and spontaneous…
Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity that is so far assumed to give rise to mode-locked operation…
Lead halide perovskite based micro- and nano- lasers have been widely studied in past two years. Due to their long carrier diffusion length and high external quantum efficiency, lead halide perovskites have been considered to have bright…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
We report on the generation of multiwavelength gain-guided soliton (GGS) in an all normal dispersion birefringent fiber laser passively mode-locked with a semiconductor saturable absorber mirror (SESAM). Determined by the cavity…
We demonstrate a simple, compact, and cost-effective laser noise reduction method for stabilizing an extended cavity diode laser to a 3x105 finesse mirror Fabry-P\'erot (F-P) cavity corresponding to resonance linewidth of 10 kHz using a…
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are…
This article investigates the stability of 'laser sail'-style spacecraft constructed from dielectric metasurfaces with areal densities $<$1g/m$^2$. We show that the microscopic optical forces exerted on a metasurface by a high power laser…
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $\mu$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a…
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SESAMs) are developing fast as a practical technology for…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Sub-threshold measurements of a photonic crystal (PC) microcavity laser operating at 1.3 microns show a linewidth of 0.10 nm, corresponding to a quality factor Q ~ 1.3x10^4. The PC microcavity mode is a donor-type mode in a graded square…
This article presents a detailed analysis, based on the first-principles finite-difference time-domain method, of the resonant frequency, quality factor (Q), mode volume (V), and radiation pattern of the fundamental (HE11) mode in a…
Pulsed Laser Deposition in molecular-beam epitaxy environment (Laser-MBE) has been used to grow high quality BaCuOx/CaCuO2 superlattices. In situ Reflection High Energy Electron Diffraction (RHEED) shows that the growth mechanism is…