Related papers: Buried heterostructure vertical-cavity surface-emi…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
We demonstrated a continuously tunable laser system by butt coupling a reflective semiconductor optical amplifier (RSOA) chip with a thin-film lithium niobate (TFLN) based multi-channel interference (MCI) cavity chip. This hybrid integrated…
We propose a new type of laser resonator based on imaginary "energy-level splitting" (imaginary coupling, or quality factor Q splitting) in a pair of coupled microcavities. A particularly advantageous arrangement involves two microring…
We report the coupling of individual InAs quantum dots (QDs) to an external-mirror microcavity. The external mirror is bonded to a fiber and positioned above a semiconductor sample consisting of a QD-containing GaAs layer on top of a…
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degenerately doped (N++) source/drain contact regrown by ozone…
We report a novel hemispherical micro-cavity that is comprised of a planar integrated semiconductor distributed Bragg reflector (DBR) mirror, and an external, concave micro-mirror having a radius of curvature $50\mathrm{\mu m}$. The…
We present a study on photonic vertical cavities consisting of nonlinear materials embedded in photonic crystals (PhCs) for resonantly enhancing second harmonic generation (SHG). Previous attempts at SHG in such structures have been limited…
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and…
Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
An innovative concept of thin-film organic solid-state laser is proposed, with diffraction-limited output and a broad tuning range covering the visible spectrum under UV optical pumping. The laser beam is tunable over 230 nm, from 440 to…
We report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
We couple a double-channel imaging technique, allowing for the simultaneous acquisition of high-quality and high-resolution intensity and peak emission wavelength profiles [T. Wang and G.L. Lippi, Rev. Sci. Instr. 86, 063111 (2015)], to the…
Various topological laser concepts have recently enabled the demonstration of robust light-emitting devices that are immune to structural deformations and tolerant to fabrication imperfections. Current realizations of photonic cavities with…
This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a)…
Rare-earth-doped fiber lasers are emerging as promising high-power mid-infrared sources for the 2.6-3.0 {\mu}m and 3.3-3.8 {\mu}m regions based on erbium and holmium ions. The intermediate wavelength range, however, remains vastly…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
We present a novel method of machining optical fiber surfaces with a CO${}_2$ laser for use in Fiber-based Fabry-Perot Cavities (FFPCs). Previously FFPCs were prone to large birefringence and limited to relatively short cavity lengths…