Related papers: Impurity State and Variable Range Hopping Conducti…
We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in…
We study the infrared conductivity of graphene at finite chemical potential and temperature taking into account the effect of phonons and disorder due to charged impurities and unitary scatterers. The screening of the long-range Coulomb…
Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…
We demonstrate how potential impurities are a very powerful tool for determining the pairing symmetry in graphene proximity-coupled to a spin-singlet superconductor. All d-wave states are characterized by subgap resonances, with spatial…
In this work, we investigate the local effects of a single short-range impurity on the electron system of a short ballistic graphene Josephson Junction. Within the Dirac-Bogoliubov-De Gennes approach, we systematically analyze the local…
We use the non-equilibrium Green's function formalism along with a self-consistent Hartree-Fock approximation to numerically study the effects of a single impurity and interactions between the electrons (with and without spin) on the…
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the…
Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…
We consider the problem of electron energy states related to strongly localized potential of a single impurity in graphene. Our model simulates the effect of impurity atom substituting the atom of carbon, on the energy spectrum of electrons…
At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…
We study the effect of impurities in superconducting graphene and discuss their influence on the local electronic properties. In particular, we consider the case of magnetic and non-magnetic impurities being either strongly localized or…
We obtain a novel bound state spectrum of the low energy excitations near the Fermi points of graphene in the presence of a charge impurity. The effects of possible short range interactions induced by the impurity are modelled by suitable…
We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…
We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and…
We model disorder in graphene by random impurities treated in a coherent-potential approximation. Using the analytically solvable Lloyd model for the disorder distribution, we show that the temperature dependence of the minimum conductivity…
Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…
In a film with large dielectric constant $\kappa$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $\kappa d$ ($d$ is the film width). This leads to the logarithmic Coulomb…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
We address the problem of an unscreened Coulomb charge in graphene, and calculate the local density of states and displaced charge as a function of energy and distance from the impurity. This is done non-perturbatively in two different…
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…