Related papers: Impurity State and Variable Range Hopping Conducti…
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…
Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform…
In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium…
We study dc and ac transport along armchair graphene nanoribbons using the ${\bf k\cdot p}$ spectrum and eigenfunctions and general linear-response expressions for the conductivities. Then we contrast the results with those for transport…
We calculate the average single particle density of states in graphene with disorder due to impurity potentials. For unscreened short-ranged impurities, we use the non-self-consistent and self-consistent Born and $T$-matrix approximations…
We study the effect of the electron-phonon interaction on the finite frequency dependent electronic thermal conductivity of two dimensional graphene. We calculate it for various acoustic phonons present in graphene and characterized by…
We present an accurate interatomic potential for graphene, constructed using the Gaussian Approximation Potential (GAP) machine learning methodology. This GAP model obtains a faithful representation of a density functional theory (DFT)…
We study the Dirac equation for quasiparticles in gapped graphene with two oppositely charged impurities by using the technique of linear combination of atomic orbitals and variational Galerkin--Kantorovich method. We show that for…
We calculate the contribution of unscreened and screened scalar and vector potential electron acoustic phonon coupling to resistivity in disordered graphene through Keldysh Greens function method within the diffusive limit. We obtain…
We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of…
We study electronic transport in graphene nanoribbons with rough edges. We first consider a model of weak disorder that corresponds to an armchair ribbon whose width randomly changes by a single unit cell size. We find that in this case,…
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…
The supercritical instability in a system of two identical charged impurities in gapped graphene described in the continuous limit by the two-dimensional Dirac equation has been studied. The case where the charge of each impurity is…
We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values…
We investigate the effect of strain and isotopic disorder on thermal transport in suspended graphene by equilibrium molecular dynamics simulations. We show that the thermal conductivity of unstrained graphene, calculated from the…
We present an analytic calculation of the conductivity of pure graphene as a function of frequency $\omega $, wave-vector $k$, and temperature for the range where the energies related to all these parameters are small in comparison with the…
Mott's variable range hopping (v.r.h.) is the phonon-induced hopping of electrons in disordered solids (such as doped semiconductors) within the regime of strong Anderson localization. It was introduced by N.~Mott to explain the anomalous…
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…
We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged…
We look at the magnetic field induced weak localisation peak of graphene samples with different mobilities. At very low temperatures, low mobility samples exhibit a very broad peak as a function of the magnetic field, in contrast to higher…