Related papers: Photonic non-volatile memories using phase change …
The integration of computing with memory is essential for distributed, massively parallel, and adaptive architectures such as neural networks in artificial intelligence (AI). Accelerating AI can be achieved through photonic computing, but…
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of…
The rapid growth of brain-inspired computing coupled with the inefficiencies in the CMOS implementations of neuromrphic systems has led to intense exploration of efficient hardware implementations of the functional units of the brain,…
Implementing optical-based memory and utilizing it for computation on the nanoscale remains an attractive but still a challenging task. While significant progress was achieved in nanophotonics, allowing to explore nonlinear optical effects…
The von-Neumann bottleneck has constrained computing systems from efficiently operating on the increasingly large demand in data from networks and devices. Silicon (Si) photonics offers a powerful solution for this issue by providing a…
The advancement in capabilities enabled by handheld devices and the prospective internet of things has led to an explosion of wireless data consumption in the last decade. The ever-increasing demand for high speed data transfer has…
Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states…
The on-chip photonic switch is a critical building block for photonic integrated circuits (PICs) and the integration of phase change materials (PCMs) enables non-volatile switch designs that are compact, low-loss, and energy-efficient.…
Metasurfaces have become a cornerstone of flat-optics, enabling precise control over light propagation through nanoengineered materials. Dynamic and reconfigurable metalenses are key to next-generation flat-optics platforms, yet their…
The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the…
Actively tunable, narrowband spectral filtering across arbitrary optical wavebands is highly desirable in a plethora of applications, from chemical sensing, hyperspectral imaging to infrared astronomy. Yet, the ability to actively…
Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics.…
Compact, non-volatile optical switches on silicon platforms are essential for reconfigurable photonics, but the strong anisotropy of silicon waveguides leads to polarization-dependent performance. In this paper, we propose a…
Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting…
The phase change compound Ge$_2$Sb$_2$Te$_5$ (GST225) is exploited in advanced non-volatile electronic memories and in neuromorphic devices which both rely on a fast and reversible transition between the crystalline and amorphous phases…
One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…
The ability to engineer nonlinear optical processes in all-dielectric nanostructures is both of fundamental interest and highly desirable for high-performance, robust, and miniaturized nonlinear optical devices. Herein, we propose a novel…
We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge$_2$Sb$_2$Te$_5$ below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of…