English
Related papers

Related papers: Gold assisted molecular beam epitaxy of Ge nanostr…

200 papers

We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either…

We report the studies of ultrafast electron nanocrystallography on size-selected Au nanoparticles (2-20 nm) supported on a molecular interface. Reversible surface melting, melting, and recrystallization were investigated with dynamical…

Materials Science · Physics 2015-05-13 Chong-Yu Ruan , Yoshie Murooka , Ramani K. Raman , Ryan A. Murdick

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial…

Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…

A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We…

Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in…

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500…

In this work, we combine electron microscopy measurements of the surface compositions in Cu-Au nanoparticles and atomistic simulations to investigate the effect of gold segregation. While this mechanism has been extensively investigated…

Hybrid superconductor--semiconductor platforms can host subgap electronic excitations such as Andreev bound states (ABSs); in topological regimes, a special zero-energy class, Majorana bound states (MBSs), can emerge. Here we report the…

Materials Science · Physics 2026-01-21 A. Elbaroudy , N. Shaw , Sandra J. Gibson , B. D. Moreno , F. Sfigakis , J. Baugh , Z. R. Wasilewski

Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution…

Mesoscale and Nanoscale Physics · Physics 2011-10-20 K. Bhattacharjee , A. Roy , S. Roy , J. Ghatak , S. Mathew , P. V. Satyam , B. N. Dev

Heterogeneous catalysts consisting of supported metallic nanoparticles typically derive exceptional catalytic activity from their large proportion of under-coordinated surface sites which promote adsorption of reactant molecules.…

Materials Science · Physics 2022-10-03 James P. Horwath , Colin Lehman-Chong , Aleksandra Vojvodic , Eric A. Stach

The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for…

We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si…

Materials Science · Physics 2013-07-09 Chloé Rolland , Philippe Caroff , Christophe Coinon , Xavier Wallart , Renaud Leturcq

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped…

Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…

Chemically synthesized single-crystalline gold microplates have been attracting increasing interests because of their potential as high-quality gold films for nanotechnology. We present the growth of tens of nanometer thick and tens of…

Materials Science · Physics 2016-12-28 Xiaofei Wu , René Kullock , Enno Krauss , Bert Hecht

Nanoscale step structures have attracted recent interest owing to their importance in both fundamental and applied research, for example in adsorption, in catalysis, and in directing nanowire growth. Here, we used a template-stripping…

Materials Science · Physics 2020-01-08 Linfeng Chen , Maria Koifman Khristosov , Cecile Saguy , Alex Katsman , Boaz Pokroy

Gold selenide (AuSe) is a multilayer compound yet to be thoroughly studied. The colloidal synthesis and characterization of gold selenide nanoparticles are described, emphasizing the effect of different gold-to-selenium precursor ratios and…

Materials Science · Physics 2023-04-05 Aditya Kumar Sahu , Satyabrata Raj

In this work we investigate the growth of $\beta$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth…

Materials Science · Physics 2020-12-21 Piero Mazzolini , Andreas Falkenstein , Zbigniew Galazka , Manfred Martin , Oliver Bierwagen