Related papers: Valley-based FETs in graphene
Spin and valley are two fundamental properties of electrons in crystals. The similarity between them is well understood in valley-contrasting physics established decades ago in two-dimensional (2D) materials like graphene--with broken…
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy…
In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two…
The valley Chern-effect is theoretically demonstrated with a novel alternating current circuitry, where closed-loop LC-resonators sitting at the nodes of a honeycomb lattice are inductively coupled along the bonds. This enables us to…
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by…
We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with…
We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different…
In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene…
We develop a unified viscous hydrodynamics for charge and valley transport in gapped graphene in the quantum Hall regime. We redefine Hall viscosity as a response to static electric-field gradients instead of strain, establishing a…
We investigate the valley relaxation due to intervalley coupling in a single-electron bilayer graphene quantum dot. The valley relaxation is assisted by both the emission of acoustic phonons via the deformation potential and bond-length…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…
The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…
We numerically investigate the electronic transport properties of graphene nanoribbons and carbon nanotubes with inter-valley coupling, e.g., in \sqrt{3}N \times \sqrt{3}N and 3N \times 3N superlattices. By taking the \sqrt{3} \times…
We theoretically investigate gate-defined graphene superlattices with broken inversion symmetry as a platform for realizing tunable valley dependent transport. Our analysis is motivated by recent experiments [C. Forsythe et al., Nat.…
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…
We investigated the electronic structure, Fermi surface topology and the emergence of valley imbalance in rhombohedral trilayer graphene (RTG) induced by the topological proximity and the electric fields. We show that, a strong proximity…
The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…
We study the role of electronic spin and valley symmetry in the quantum interference (QI) patterns of the transmission function in graphene quantum junctions. In particular, we link it to the position of the destructive QI anti-resonances.…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry are considered theoretically in the linear response regime. Scattering state wave functions of electrons entering the nanostructure from the…