Related papers: L-valley Electron Spin Dynamics in GaAs
Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K.…
It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of…
We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited…
A method is presented to calculate the spin relaxation times T1, T2 due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift {\delta}{\omega}E when an electric field is present, in the diffusion…
We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature…
Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the…
We use time-resolved detection of the Hanle effect and polarized photoluminescence with dark intervals to investigate the buildup and decay of the spin polarization of nuclei interacting with donor-bound electrons in $n$-doped GaAs. Strong…
We develop a simple method for measuring the electron spin relaxation times $T_1$, $T_2$ and $T_2^*$ in semiconductors and demonstrate its exemplary application to $n$-type GaAs. Using an abrupt variation of the magnetic field acting on…
Manipulating the spin polarization of electron beams using light is highly desirable but exceedingly challenging, as the approaches proposed in previous studies using free-space light usually require enormous laser intensities. Here, we…
We perform time- and angle-resolved photoelectron spectroscopy on p-type GaAs(110). We observe an optically excited population in the conduction band, from which the time scales of intraband relaxation and surface photovoltage decay are…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval…
We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots…
We present observations of electron energization in magnetic reconnection outflows during the pre-impulsive phase of solar flare SOL2012-07-19T05:58. During a time-interval of about 20 minutes, starting 40 minutes before the onset of the…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…